| PART |
Description |
Maker |
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| MB8464A |
CMOS 64K Low Power SRAM
|
Fujitsu
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| BS616UV1010AIP10 BS616UV1010DIG10 BS616UV1010ACP10 |
Ultra Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto...
|
| BS616LV1010 BS616LV1010AC BS616LV1010AI BS616LV101 |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IDT71V016 IDT71V016SA IDT71V016SA10BF8 IDT71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PBGA48
High-Performance Current-Mode PWM Controller 14-SOIC -40 to 85 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K X 16 STANDARD SRAM, 12 ns, PDSO44 0.400 INCH, PLASTIC, SOJ-44
TOOLS,SCREWDRIVERS,TORX,BALLDRIVER T-HANDLE SET,10-PC.INCH SIZES 3/32-3/8" AND STAND,HAND TOOLS,BALLDRIVER® T-HANDLE SETS ,BONDHUS
3.3V 64K x 16 Static RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| A62S6316V-70SI |
64K X 16 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology
|
